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AH8113

CMOS HALL SWITCH

AH8113 Features

* Micro power design

* 2.4 V to 5.5 V battery operation

* High sensitivity and high stability of the magnetic switching points

* High resistance to mechanical stress

* Digital output signal

* Switching for both poles of a magnet (omnipolar)

* Not suitable for automotive a

AH8113 General Description

The AH8113 is an Integrated Hall-Effect Sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 2.4V-5.5V. Precise magnetic switching points and high temperature stability are achieved through th.

AH8113 Datasheet (436.37 KB)

Preview of AH8113 PDF

Datasheet Details

Part number:

AH8113

Manufacturer:

AiT Semiconductor

File Size:

436.37 KB

Description:

Cmos hall switch.

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AH8113 CMOS HALL SWITCH AiT Semiconductor

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