AFP8483 Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP8483 Features

* -100V/-3.8A,RDS(ON)= 260mΩ@VGS= -10V -100V/-2.6A,RDS(ON)= 290mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-223 package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter Pin

AFP8483 General Description

AFP8483, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP8483 Datasheet (492.67 KB)

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AFP8483

Manufacturer:

Alfa-MOS

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492.67 KB

Description:

P-channel enhancement mode mosfet.

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AFP8483 P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP8483 Features

AFP8483 General Description

Datasheet Details

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