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AFP9575S

P-Channel Enhancement Mode MOSFET

AFP9575S Features

* -60V/-18A,RDS(ON)= 68mΩ@VGS= -10V -60V/-12A,RDS(ON)= 78mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G S

AFP9575S General Description

AFP9575S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP9575S Datasheet (879.85 KB)

Preview of AFP9575S PDF

Datasheet Details

Part number:

AFP9575S

Manufacturer:

Alfa-MOS

File Size:

879.85 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP9575S P-Channel Enhancement Mode MOSFET Alfa-MOS

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