• Part: AS4C256M16D3B-12BCN
  • Description: Double-data-rate architecture
  • Manufacturer: Alliance Semiconductor
  • Size: 1.72 MB
Download AS4C256M16D3B-12BCN Datasheet PDF
Alliance Semiconductor
AS4C256M16D3B-12BCN
Revision History 4Gb AS4C256M16D3B - 12BCN 96 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Apr. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/41 - Rev.1.0 April 2016 Specifications - Density : 4G bits - Organization : 32M words x 16 bits x 8 banks - Package : - 96-ball FBGA - Lead-free (Ro HS pliant) and Halogen-free - Power supply : VDD, VDDQ = 1.5V ± 0.075V - Data rate : - 1600Mbps - 2KB page size - Row address: A0 to A14 - Column address: A0 to A9 - Eight internal banks for concurrent operation - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Burst type (BT) : - Sequential (8, 4 with BC) - Interleave (8, 4 with BC) - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11 - CAS Write Latency (CWL) : 5, 6, 7, 8 - Precharge : auto precharge option for each...