• Part: AS4C256M16D3LA-12BIN
  • Description: 256M x 16 bit DDR3L Synchronous DRAM
  • Manufacturer: Alliance Semiconductor
  • Size: 2.17 MB
Download AS4C256M16D3LA-12BIN Datasheet PDF
Alliance Semiconductor
AS4C256M16D3LA-12BIN
Features - JEDEC Standard pliant - Power supplies: VDD & VDDQ = +1.35V - Backward patible to VDD & VDDQ = 1.5V ±0.075V - Operating temperature: -40~95°C (TC) - Supports JEDEC clock jitter specification - Fully synchronous operation - Fast clock rate: 800 MHz - Differential Clock, CK & CK# - Bidirectional differential data strobe - DQS & DQS# - 8 internal banks for concurrent operation - 8n-bit prefetch architecture - Pipelined internal architecture - Precharge & active power down - Programmable Mode & Extended Mode registers - Additive Latency (AL): 0, CL-1, CL-2 - Programmable Burst lengths: 4, 8 - Burst type: Sequential / Interleave - Output Driver Impedance Control - 8192 refresh cycles / 64ms - Average refresh period 7.8 s @ -40°C TC +85°C 3.9 s @ +85°C TC +95°C - Write Leveling - ZQ Calibration - Dynamic ODT (Rtt_Nom & Rtt_WR) - Ro HS pliant - Auto Refresh and Self Refresh - 96-ball 9 x 13 x 1.0mm FBGA package - Pb and Halogen Free Overview The 4Gb Double-Data-Rate-3 (DDR3L)...