AS6C8016-55TIN Datasheet (Alliance Semiconductor) - low power CMOS static random access memory

AS6C8016-55TIN, low power CMOS static random access memory

The AS6C8016-55TIN is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits.

It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

The AS6C8016-55TIN is well

AS6C8016-55TIN Features

* n

* Fast access time : 55ns n

* Low power consumption: Operating current : 30/20mA (TYP.) Standby current : 1.5µA (TYP.) SL-version n

* Single 2.7V ~ 3.6V power supply n

* All inputs and outputs TTL compatible n

* Fully static operation n

* Tri-state output n

* Data byte control