AS8C403600

3.3V Synchronous SRAMs

Alliance Semiconductor

AS8C403600 Features

* 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial:

* 150MHz 3.8ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control ( GW l ( ), byte write enable (BWE), and byte writes ( BWx) 3.3V core power

AS8C403600 General Description

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* TheAS8C403600/1800 are high- speed SRAMs organized as 128K x 36/256K x 18. The AS8C403600/401800 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be le.

AS8C403600 Datasheet (1.08 MB)

AS8C403600 Datasheet Preview — Preview of AS8C403600 PDF

Datasheet Details

Part number:

AS8C403600

Manufacturer:

Alliance Semiconductor

File Size:

1.08 MB

Description:

3.3v synchronous srams.
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
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* AS8C403600 AS8C401800 Featu.

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AS8C403600 3.3V Synchronous SRAMs Alliance Semiconductor

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AS8C403600 Features

AS8C403600 General Description

Datasheet Details

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Description:

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