AS9F18G08SA-45BIN
Features
- HIGH DENSITY NAND FLASH MEMORIES Cost effective solutions for mass storage applications
- DENSITY 1Gbit / 2Gbit / 4Gbit / 8Gbit
- NAND INTERFACE x8 bus width. Pinout patibility for all densities
- SUPPLY VOLTAGE 3.3V Device : Vcc = 2.7V ~ 3.6V 1.8V Device : Vcc= 1.7V ~ 1.95V
- PAGE SIZE 1Gb:(2K+64 spare) bytes 2Gb:(2K+128 spare) bytes 4Gb & 8Gb:(2K+128 spare) bytes
- BLOCK SIZE 1Gb : (128 K + 4 K spare) bytes 2Gb : (128 K + 8 K spare) bytes 4Gb & 8Gb : (128 K + 8 K spare) bytes
- PLANE SIZE 1Gb : 1024 Blocks per Plane 2Gb : 1024 Blocks per Plane 4Gb & 8Gb : 2048 Blocks per Plane
- DEVICE SIZE 1Gb : 1 plane per device or 128M bytes 2Gb : 2 plane per device or 256M bytes 4Gb : 2 plane per device or 512M bytes 8Gb : Dual 4Gb Dies per Package, 1024M bytes
- FAST BLOCK ERASE 1Gb : Block erase time: 3 ms (Typ) 2Gb : Block erase time: 3.5 ms (Typ) 4Gb / 8Gb : Block erase time: 3.5 ms (Typ)
- COPY BACK PROGRAM
- Fast Data Copy without external buffering
- CACHE READ
- Internal...
