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AO4418 N-Channel FET

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Description

AO4418 N-Channel Enhancement Mode Field Effect Transistor General .
The AO4418 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Features

* VDS (V) = 30V ID = 11.5A (VGS = 20V) RDS(ON) < 14mΩ (VGS = 20V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source V

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