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AO4446 N-Channel MOSFET

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Description

AO4446 N-Channel Enhancement Mode Field Effect Transistor General .
The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.

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Datasheet Specifications

Part number
AO4446
Manufacturer
Alpha & Omega Semiconductors
File Size
142.08 KB
Datasheet
AO4446_AlphaOmegaSemiconductors.pdf
Description
N-Channel MOSFET

Features

* VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Av

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