AO4446 Datasheet - Alpha & Omega Semiconductors

AO4446 N-Channel MOSFET

The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance. This device is ideally suited for use in PWM applications. Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications). AO4446L is a Green Product order.

AO4446 Features

* VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Av

AO4446_AlphaOmegaSemiconductors.pdf