AO4446 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO4446
Manufacturer	Alpha & Omega Semiconductors
File Size	142.08 KB
Description	N-Channel MOSFET
Datasheet	AO4446_AlphaOmegaSemiconductors.pdf

The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance.

VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current B Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum.

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Published: Dec 1, 2008 |