AO4446 - N-Channel MOSFET
The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low www.DataSheet4U.com gate resistance.
This device is ideally suited for use in PWM applications.
Standard Product AO4446 is Pb-free (meets ROHS & Sony 259 specifications).
AO4446L is a Green Product order
AO4446 Features
* VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Av
