AO4900A Datasheet - Alpha & Omega Semiconductors

AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor

The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficie.

AO4900A Features

* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K D1 SOIC-8 A G1 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted

AO4900A_AlphaOmegaSemiconductors.pdf

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Datasheet Details

Part number:

AO4900A

Manufacturer:

Alpha & Omega Semiconductors

File Size:

141.36 KB

Description:

Dual n-channel enhancement mode field effect transistor.

AO4900A Distributor

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AO4900A AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors