AO4900A - Dual N-Channel Enhancement Mode Field Effect Transistor
The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.
A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficie
AO4900A Features
* VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 G2 S2 K D1 SOIC-8 A G1 S1 Absolute Maximum Ratings T A=25°C unless otherwise noted
