AO4916
Description
The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DCDC converters. A Schottky diode is co-packaged in .. parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K
D2
G1 S1
G2 S2
SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
MOSFET 30 ±20 8.5 6.6 40
Schottky
Units V V A
VGS TA=70°C ID IDM VKA TA=25°C
Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range...
