AO9926E Datasheet - Alpha & Omega Semiconductors

AO9926E, Dual N-Channel MOSFET

AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

Features

* VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Sourc

AO9926E-AlphaOmegaSemiconductors.pdf