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AO9926E

Dual N-Channel MOSFET

AO9926E Features

* VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21mΩ (VGS = 4.5V) RDS(ON) < 25mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Sourc

AO9926E General Description

The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259 specific.

AO9926E Datasheet (104.55 KB)

Preview of AO9926E PDF

Datasheet Details

Part number:

AO9926E

Manufacturer:

Alpha & Omega Semiconductors

File Size:

104.55 KB

Description:

Dual n-channel mosfet.

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TAGS

AO9926E Dual N-Channel MOSFET Alpha & Omega Semiconductors

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