AOI452 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOI452
Manufacturer	Alpha & Omega Semiconductors
File Size	470.64 KB
Description	N-Channel MOSFET
Datasheet	AOI452-AlphaOmegaSemiconductors.pdf

The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.7 mΩ (VGS = 10V) RDS(ON) < 14.7 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested IPAK D GD S Top View Drain Connected to Tab G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C.

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Published: Oct 24, 2015 |