Datasheet Details
| Part number | AON6978 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 476.95 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
 AON6978 Datasheet
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| Part number | AON6978 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 476.95 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
AON6978 Datasheet
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Top View DFN5X6B Bottom View Top View Q1 30V 28A <5.7mΩ <9.4mΩ Q2 30V 36A <3.8mΩ <4.9mΩ Bottom View PIN1 PIN1 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±12 Continuous Drain Current G TC=25°C TC=100°C ID 28 22 36 28 Pulsed Drain Current C IDM 112 144 Continuous Drain Current TA=25°C TA=70°C 20 IDSM 16 28 22 Avalanche Current C IAS 40 60 Avalanche Energy L=0.01mH C EAS 8 18 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 31 12 33 13 TA=25°C Power Dissipation A TA=70°C 3.6 4.3 PDSM 2.3 2.7 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 29 56 3.3 Typ Q2 24 50 3 Max Q1 35 67 4 Max Q2 29 60 3.8 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.1.0: June 2013 www.aosmd.com Page 1 of 10 AON6978 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS
AON6978 30V Dual Asymmetric N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
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| AON6973A | N-Channel MOSFET |
| AON6974A | N-Channel MOSFET |
| AON6906A | N-Channel MOSFET |
| AON6908 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6908A | N-Channel MOSFET |
| AON6910A | N-Channel MOSFET |
| AON6912 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6912A | 30V Dual Asymmetric N-Channel MOSFET |
| AON6918 | N-Channel MOSFET |