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AOP806 Dual N-Channel MOSFET

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Description

www.DataSheet4U.com AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
AOP806
Manufacturer
Alpha & Omega Semiconductors
File Size
141.14 KB
Datasheet
AOP806_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel MOSFET

Features

* VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Sourc

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