D3N50 - AOD3N50
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly int
D3N50 Features
* VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B P
