AA028P1-00 Datasheet - Alpha Industries

AA028P1-00 27-29 GHz GaAs MMIC Power Amplifier

Alpha’s two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10% power added efficiency at 28 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniform.

AA028P1-00 Features

* I Single Bias Supply Operation (6 V) I 22 dBm Typical P1 dB Output Power at 28 GHz I 13.5 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.329 0.000 0.000 0.519 2.784 3.400

AA028P1-00_AlphaIndustries.pdf