AA032P1-00 Datasheet - Alpha Industries

AA032P1-00 30-36 GHz GaAs MMIC Power Amplifier

Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest.

AA032P1-00 Features

* 2.415 1.929 1.099 0.597 0.000 0.000 0.120 0.107 1.143 2.179 2.285 1.937 1.099 0.597 I Single Gate and Drain Biases I 25 dBm Typical P1 dB Output Power at 31 GHz I 11 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 20

AA032P1-00_AlphaIndustries.pdf