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AA038P5-00 - 37-39 GHz GaAs MMIC Power Amplifier

Datasheet Summary

Description

Alpha’s three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37

39 GHz.

Features

  • s Single Bias Supply Operation (5.5 V) s 18 dB Typical Small Signal Gain s 19 dBm Typical P1 dB Output Power at 39 GHz s 0.25 µm Ti/Pd/Au Gates 0.000 1.342 2.166 2.989 0.470 0.000 3.400 0.112 Chip Outline 1.700 1.230 1.588 s 100% On-Wafer RF and DC Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.

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Datasheet Details

Part number AA038P5-00
Manufacturer Alpha Industries
File Size 129.29 KB
Description 37-39 GHz GaAs MMIC Power Amplifier
Datasheet download datasheet AA038P5-00 Datasheet
Additional preview pages of the AA038P5-00 datasheet.

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Full PDF Text Transcription

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37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features s Single Bias Supply Operation (5.5 V) s 18 dB Typical Small Signal Gain s 19 dBm Typical P1 dB Output Power at 39 GHz s 0.25 µm Ti/Pd/Au Gates 0.000 1.342 2.166 2.989 0.470 0.000 3.400 0.112 Chip Outline 1.700 1.230 1.588 s 100% On-Wafer RF and DC Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s three-stage reactively-matched Ka band GaAs MMIC amplifier has a typical P1 dB of 19 dBm with 17 dB associated gain over the band 37–39 GHz. The chip uses Alpha’s proven 0.
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