FIGB25N120TDG Datasheet, Igbt, American First Semiconductor

FIGB25N120TDG Features

• Igbt ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capability Application

PDF File Details

Part number:

FIGB25N120TDG

Manufacturer:

American First Semiconductor

File Size:

1.23MB

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📄 Datasheet

Description:

Igbt. Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching perfor

TAGS

FIGB25N120TDG

American First Semiconductor

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