C4H2350N05 Datasheet - Ampleon

C4H2350N05 Power GaN transistor

5 W GaN packaged power transistor for base station applications. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 V; IDq = 10 mA; unless otherwise specified. Test signal f IDq VDS PL(AV) Gp D ACPR PL(3dB) (MHz) (mA) (V) (dB.

C4H2350N05 Features

* Excellent digital pre-distortion capability

* High efficiency

* Designed for broadband operation

* Lower output capacitance for improved performance in applications

* For RoHS compliance see the product details on the Ampleon website 1.3 Applications

* RF power amplifier f

C4H2350N05 Datasheet (1.41 MB)