C4H2350N05 Power GaN transistor

Ampleon

Description

C4H2350N05 Power GaN transistor Rev.1 * 8 July 2021 Product data sheet 1.Product profile 1.1 General .
5 W GaN packaged power transistor for base station applications.

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Datasheet Specifications

Part number: C4H2350N05
Manufacturer: Ampleon
File Size: 1.41 MB
Datasheet: C4H2350N05-Ampleon.pdf
Description: Power GaN transistor

Features

* Excellent digital pre-distortion capability
* High efficiency
* Designed for broadband operation

Applications

* Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 V; IDq = 10 mA; unless otherwise specified. Test signal f IDq VDS PL(AV) Gp D ACPR PL(3dB) (MHz) (mA) (V) (dBm) (dB) (%) (dBc) (dBm) 1-carrier W-CDMA [1] 2496 to 2690 10 48

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