C4H2350N05 Datasheet - Ampleon

Power GaN transistor

C4H2350N05 Features

* Excellent digital pre-distortion capability

* High efficiency

* Designed for broadband operation

* Lower output capacitance for improved performance in applications

* For RoHS compliance see the product details on the Ampleon website 1.3 Applications

* RF power amplifier f

C4H2350N05 General Description

5 W GaN packaged power transistor for base station applications. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 V; IDq = 10 mA; unless otherwise specified. Test signal f IDq VDS PL(AV) Gp D ACPR PL(3dB) (MHz) (mA) (V) (dB.

C4H2350N05 Datasheet (1.41 MB)

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Datasheet Details

Part number:

C4H2350N05

Manufacturer:

Ampleon

File Size:

1.41 MB

Description:

Power gan transistor.

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C4H2350N05 Power GaN transistor Ampleon

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C4H2350N05 Features

C4H2350N05 General Description

Datasheet Details

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Description:

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