* P1dB Output Power: +15.5 dBm Output IP3: +32 dBm Gain: 14.5 dB 50 Ohm I/O’s 16 Lead 3x3mm SMT Package: 9mm2 General Description The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either
HMC311LP3E Datasheet (955.40 KB)
HMC311LP3E
955.40 KB
Ingap hbt gain block mmic amplifier.
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
The HMC311LP3(E) is ideal for:
* Cellular / PCS / 3G
* Fixed Wireless & WLA.
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