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Analog Power
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • LED Inverter Circuits • Inrush Limiter and Hot Swap Circuits • 48V-Input DC/DC Conversion Circuits
AM10N20-750B
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
200 750 @ VGS = 10V
ID (A) 10a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 200
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 10 40 10 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient C Maximum Junction-to-Case
T
AM10N20-750B Datasheet
