AM2313P Datasheet | Analog Power

Analog Power - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power management in portable and battery-powered products and most low current high side switch. - Low r DS(on) Provides Higher Efficiency and Extends Battery Life - Fast Switch - Low Gate Charge - High Saturation Current - Miniature SOT-23 Surface Mount Package Saves Board Space PRODUCT SUMMARY VDS (V) r DS(on) (Ω) -60 10 @ VGS = -10 V 20 @ VGS = -4.5V ID (A) -0.2 -0.12 ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C -60 ±20 ±0.12 ±0.09 ±1 Continuous Source Current (Diode Conduction)a IS 0.24 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C TA=70o C TJ, Tstg 0.36 0.29 -55 to 150 W o C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July,...