* Ultra-low power, the transmission distance, fully automated calibration, the use of capacitive humidity sensor, completely interchangeable, standard digital single-bus output, excellent long-term stability, high accuracy temperature measurement devices. Aosong(Guangzhou) Electronics Co.,Ltd. TEL：0
AM2302
Aosong
472.15 KB
Digital temperature and humidity sensor.
Temperature and humidity module
AM2302 Product Manual
www.aosong.com
1、Product Overview
AM2302 capacitive humidity sensing digital temperature and hu.
📁 Related Datasheet
AM2300 - N-Channel Enhancement Mode MOSFET
(AXElite)
AM2300
N-Channel Enhancement Mode MOSFET
Features
•
20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=115mΩ(typ.) @ VGS=2.5.
AM2300 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
AM2300
MOSFET 20V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2300 is the N-Channel logic enhanc.
AM2300N - N-Channel MOSFET
(Analog Power)
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat.
AM2301 - Digital temperature and humidity sensor
(Aosong)
DHT21
：DHT21 AM2301
DHT21 /AM2301 DHT21/AM2301
► ►， ► ► ► ► ►4 ► DHT21 DHT21 。， 。NTC ，8。、 、、。DHT21 。OTP， 。， 。、，20， 。 4 。，。 ► ► ► ► ► ►
► ► ►.
AM2301 - P-Channel Enhancement Mode MOSFET
(AXElite)
AM2301
P-Channel Enhancement Mode MOSFET
Features
z
Pin Description
Top View
D
-20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS= -4.5V RDS(ON)= 110mΩ (typ.) .
AM2301 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
AM2301
MOSFET
-20V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM2301 is the P-Channel logic enhancement mode.
AM2301P - P-Channel MOSFET
(Analog Power)
Analog Power
P-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applicat.
AM2301PE - P-Channel 20-V (D-S) MOSFET
(Analog Power)
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.
