AS4SD4M16 Datasheet (Austin Semiconductor) - 4 Meg x 16 SDRAM Synchronous DRAM Memory

AS4SD4M16, 4 Meg x 16 SDRAM Synchronous DRAM Memory

The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits.

It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Each of the x16’s 6,777,216-bit banks is organized as

AS4SD4M16 Features

* www.DataSheet4U.com AS4SD4M16 PIN ASSIGNMENT (Top View) 54-Pin TSOP Extended Testing Over -55°C to +125° C and Industrial Temp -40°C to 85° C WRITE Recovery ( tWR/ tDPL