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ACPL-W347 - 1.0 Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler

Download the ACPL-W347 datasheet PDF. This datasheet also covers the ACPL-P347 variant, as both devices belong to the same 1.0 amp output current sic/gan mosfet and igbt gate drive optocoupler family and are provided as variant models within a single manufacturer datasheet.

Description

The ACPL-P347/W347 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage.

This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide / Gallium Nitride) MOSFETs and IGBTs used in power conversion applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ACPL-P347-Avago.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ACPL-W347
Manufacturer Avago
File Size 181.80 KB
Description 1.0 Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler
Datasheet download datasheet ACPL-W347 Datasheet

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Other Datasheets by Avago

Part Number Description
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ACPL-W345 1.0 Amp Output Current Power & SiC MOSFET Gate Drive Optocoupler
ACPL-W480 High CMR Intelligent Power Module and Gate Drive Interface Optocoupler
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ACPL-P347 and ACPL-W347 1.0 Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The ACPL-P347/W347 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide / Gallium Nitride) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving SiC/GaN MOSFET and IGBT with ratings up to 1200V/50A.
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