Datasheet4U Logo Datasheet4U.com

B1D08065E Datasheet - BASiC Semiconductor

B1D08065E - SiC Schottky Diode

of Changes Release of the datasheet.

Characteristics updated.

Characteristics updated.

Characteristics updated.

BASiC Semiconductor Ltd.

Shenzhen, China © 2022 BASiC Semiconductor Ltd.

All Rights Reserved.

Information For further information on technology, delivery terms and conditions and prices,

B1D08065E Features

* Extremely low reverse current

* No reverse recovery current

* Temperature independent switching

* Positive temperature coefficient on V F

* Excellent surge current capability

* Low capacitive charge Benefits

* Essentially no switching losses

* System efficie

B1D08065E-BASiCSemiconductor.pdf

Preview of B1D08065E PDF
B1D08065E Datasheet Preview Page 2 B1D08065E Datasheet Preview Page 3

Datasheet Details

Part number:

B1D08065E

Manufacturer:

BASiC Semiconductor

File Size:

284.14 KB

Description:

Sic schottky diode.

📁 Related Datasheet

📌 All Tags