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B1D08065E Datasheet - BASiC Semiconductor

B1D08065E SiC Schottky Diode

of Changes Release of the datasheet. Characteristics updated. Characteristics updated. Characteristics updated. BASiC Semiconductor Ltd. Shenzhen, China © 2022 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, .

B1D08065E Features

* Extremely low reverse current

* No reverse recovery current

* Temperature independent switching

* Positive temperature coefficient on V F

* Excellent surge current capability

* Low capacitive charge Benefits

* Essentially no switching losses

* System efficie

B1D08065E Datasheet (284.14 KB)

B1D08065E Datasheet Preview — Preview of B1D08065E PDF

Datasheet Details

Part number:

B1D08065E

Manufacturer:

BASiC Semiconductor

File Size:

284.14 KB

Description:

Sic schottky diode.

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B1D08065E SiC Schottky Diode BASiC Semiconductor

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