B1D08065E Datasheet (BASiC Semiconductor)

B1D08065E - SiC Schottky Diode

of Changes Release of the datasheet.

Characteristics updated.

BASiC Semiconductor Ltd.

Information For further information on technology, delivery terms and conditions and prices,

B1D08065E Features

* Extremely low reverse current

* No reverse recovery current

* Temperature independent switching

* Positive temperature coefficient on V F

* Excellent surge current capability

* Low capacitive charge Benefits

* Essentially no switching losses

* System efficie