Part number:
B2D08065KS
Manufacturer:
BASiC Semiconductor
File Size:
575.04 KB
Description:
Sic schottky diode.
.
B2D08065KS Datasheet (575.04 KB)
B2D08065KS Datasheet (575.04 KB)
B2D08065KS
BASiC Semiconductor
575.04 KB
Sic schottky diode.
.
📁 Related Datasheet
B2D08065K1 - SiC Schottky Diode
(BASiC Semiconductor)
B2D08065K1
SiC Schottky Diode
Product Summary
VRRM
650V
IF (TC=160°C)
8A
QC
24 nC
Features
Low leakage current (IR) Zero reverse recovery .
B2D06065E1 - SiC Schottky Diode
(BASiC Semiconductor)
B2D06065E1
SiC Schottky Diode
Product Summary
VRRM
650V
Package: TO-252-3
IF (TC=160°C) QC
6A 17 nC
Features
Low leakage current (IR) Zero .
B2D06065K1 - SiC Schottky Diode
(BASiC Semiconductor)
B2D06065K1
SiC Schottky Diode
Product Summary
VRRM
650V
IF (TC=165°C)
6A
QC
18 nC
Features
Low leakage current (IR) Zero reverse recovery .
B2D10065Q - SiC Schottky Diode
(BASiC Semiconductor)
Product Summary
VRRM
650V
IF (TC=155°C)
10 A
QC
29 nC
Features
Extremely low reverse current No reverse recovery current Temperature ind.
B2D10120H1 - SiC Schottky Diode
(BASiC Semiconductor)
Product Summary
VRRM
1200V
IF (TC=150°C) QC
10 A 51 nC
Features
Low leakage current (IR) Zero reverse recovery current Temperature independ.
B2D10120K1 - SiC Schottky Diode
(BASiC Semiconductor)
Product Summary
VRRM
1200V
IF (TC=155°C) QC
10 A 51 nC
Features
Extremely low reverse current No reverse recovery current Temperature indep.
B2D15065K - SiC Schottky Diode
(BASiC Semiconductor)
Product Summary
VRRM
650V
IF (TC=155°C) QC
15 A 46 nC
Features
Extremely low reverse current No reverse recovery current Temperature indepe.
B2D16065HC1 - SiC Schottky Diode
(BASiC Semiconductor)
Product Summary
VRRM
650V
IF (TC=160°C)
16 A**
QC
46 nC**
* Per Leg, ** Per Device
Features
Low leakage current (IR) Zero reverse recovery.
