BL3N100E
BELLING
0.99MB
Power mosfet. Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce t
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BL3N60 - N-Channel Power Mosfet
(GME)
3A,600V N-Channel Power Mosfet
FEATURES
VDS = 600V , ID = 3A RDS(ON) =3.6Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC )
Pb
Lead-free
.
BL3N65 - N-Channel Power Mosfet
(GME)
3A,650V N-Channel Power Mosfet
FEATURES
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 10 nC )
Pb
Lead-free
Low reverse transfer C.
BL3N80 - N-Channel Power Mosfet
(GME)
2.5A,800V N-Channel Power Mosfet
FEATURES
RDS(ON) =3.8Ω@ VGS = 10V Ultra low gate charge ( typical 19 nC )
Pb
Lead-free
Low reverse transfer.
BL3N90E - Power MOSFET
(BELLING)
BL3N90E
Power MOSFET
1.Description
Step-Down Converter
BL3N90E, the silicon N-channel Enhanced
,
MOSFETs, is obtained by advanced MOSFET
technol.
BL3085A - RS-485 Transceivers
(BELLING)
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lm.
BL3085B - RS-485 Transceivers
(BELLING)
BL3085B
High ESD-Protected, Fail-Safe, Slew-Rate-Limited
RS-485 Transceivers
General Description
The BL3085B is a half-duplex RS-485 transceiver with.
BL3085E - High-speed transceiver
(BELLING)
BL3085E
General Description
TheBL3085E is a +/- 15kV electrostatic discharge (ESD) protected, high-speed transceiver for RS-485 munication that co.
BL3090 - RS-485/RS-422 Transceivers
(BELLING)
BL3090
、、
RS-485/RS-422
BL3090RS-485/RS-422,。 BL3090,EMI, 500kbps(5V)。BL3090, ,。BL30901/8, 256。
➢ +3.3V+5V ➢ ➢ :500kbps(5V)
250kbps(3.3V) ➢ 256 ➢.
BL3102 - COMS Clock Generator/Driver
(SHANGHAI BELLING)
L3102
COMS Clock Generator/Driver For Low Voltage Operation BBD
Description The BL3102 is a low output impedance , CMOS
2-phase clock generator/drive.
BL317 - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR
(BELLING)
BL317
HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR BL317
DESCRIPTION
The BL317 is an adjustable 3-terminal positive voltage regulator, designed to suppl.