Datasheet4U Logo Datasheet4U.com

BL3N100E - Power MOSFET

📥 Download Datasheet

Preview of BL3N100E PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number BL3N100E
Manufacturer BELLING
File Size 0.99 MB
Description Power MOSFET
Datasheet download datasheet BL3N100E-BELLING.pdf

BL3N100E Product details

Description

Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching and general purpose applications.KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 1000 V ID 2.5 A RD S(O N ) .T yp 6.2 Ω

Features

📁 BL3N100E Similar Datasheet

  • BL3N60 - N-Channel Power Mosfet (GME)
  • BL3N65 - N-Channel Power Mosfet (GME)
  • BL3N80 - N-Channel Power Mosfet (GME)
  • BL3102 - COMS Clock Generator/Driver (SHANGHAI BELLING)
  • BL3201B - PLED (Bolymin)
  • BL3207 - 1024 segment low voltage and low noise BBD (SHANGHAI BELLING)
  • BL3207A - 1024-stage low voltage operation and low noise BBD variable delay line (SHANGHAI BELLING)
  • BL3207B - 1024-stage low voltage operation and low noise BBD variable delay line (SHANGHAI BELLING)
Other Datasheets by BELLING
Published: |