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BLM3050K N-Channel Enhancement Mode Power MOSFET

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Description

Pb Free Product BLM3050K N-Channel Enhancement Mode Power MOSFET .
The BLM3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
BLM3050K
Manufacturer
BELLING
File Size
487.55 KB
Datasheet
BLM3050K-BELLING.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation

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