BSD3A031LV45 Datasheet - BORN

ESD Protection Diode

* 800Watts peak pulse power (tp = 8/20μs)

* Unidirectional configurations

* Solid-state silicon-avalanche technology

* Low clamping voltage

* Low leakage current

* IEC 61000-4-2 ±30kV contact ±30kV air

* IEC 61000-4-4 (EFT) 40A (5/50ns)

* IEC 61000-4-5 (Lightning) 40A

BSD3A031LV45

BORN

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Esd protection diode.

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BSD3A031LV45 ESD Protection Diode BORN

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