P4SMA62A Datasheet | Bourns

Features - Ro HS pliant- and halogen free- - - Surface Mount SMA package - Breakdown Voltage: 6.8 to 550 volts - Peak Pulse Power: 400 watts - Typical temperature coefficient: ΔVBR = 0.1 % x VBR @ 25 °C x ΔT Applications - IEC 61000-4-2 ESD (Min. Level 4) - IEC 61000-4-4 EFT - IEC 61000-4-5 Surge P4SMA Transient Voltage Suppressor Diode Series General Information The markets of portable munications, puting and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic ponents. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in pact chip package DO-214AC (SMA) size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Additional Information Click these links for more information: PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT SELECTOR LIBRARY Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Value Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM Instantaneous Forward Voltage @ 25 A (For Unidirectional Units Only) P4SMA6.8A ~ P4SMA200A P4SMA220A ~ P4SMA550A 3.5 5.0 Operating Temperature Range -55 to...