BS616LV4017
FEATURES
Very Low Power/Voltage CMOS SRAM 256K X 16 bit
- Wide Vcc operation voltage : 2.4~5.5V
- Very low power consumption : Vcc = 3.0V C-grade: 26m A (@55ns) operating current I-grade: 27m A (@55ns) operating current C-grade: 21m A (@70ns) operating current I-grade: 22m A (@70ns) operating current 0.45u A (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63m A (@55ns) operating current I-grade: 65m A (@55ns) operating current C-grade: 53m A (@70ns) operating current I-grade: 55m A (@70ns) operating current 2.0u A (Typ.) CMOS standby current
- High speed access time : -55 55ns -70 70ns
- Automatic power down when chip is deselected
- Three state outputs and TTL patible
- Fully static operation
- Data retention supply voltage as low as 1.5V
- Easy expansion with CE and OE options
- I/O Configuration x8/x16 selectable by LB and UB pin
- DESCRIPTION
The BS616LV4017 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and...
