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BS616LV4017 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit

Datasheet Summary

Description

The BS616LV4017 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage.

Features

  • S Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4017.
  • Wide Vcc operation voltage : 2.4~5.5V.
  • Very low power consumption : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21mA (@70ns) operating current I-grade: 22mA (@70ns) operating current 0.45uA (Typ. ) CMOS standby current Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I-grade: 55m.

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Datasheet Details

Part number BS616LV4017
Manufacturer BSI
File Size 265.86 KB
Description Very Low Power/Voltage CMOS SRAM 256K X 16 bit
Datasheet download datasheet BS616LV4017 Datasheet
Additional preview pages of the BS616LV4017 datasheet.

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Full PDF Text Transcription

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4017 • Wide Vcc operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21mA (@70ns) operating current I-grade: 22mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I-grade: 55mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
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