Datasheet4U Logo Datasheet4U.com

B8R512K39RH

Radiation-Hardened SRAM

B8R512K39RH Datasheet (887.98 KB)

Preview of B8R512K39RH PDF Datasheet

Datasheet Details

Part number:

B8R512K39RH

Manufacturer:

Beijing Microelectronics

File Size:

887.98 KB

Description:

Radiation-hardened sram

B8R512K39RH Features

* 1 2. General Description 1 3. Block Diagram 2 4. Pin Description3 5. Pin Configurations(Appendix 1)

B8R512K39RH General Description

1 3. Block Diagram 2 4. Pin Description3 5. Pin Configurations(Appendix 1) .

📁 Related Datasheet

B8R512K8RH - Radiation-Hardened SRAM (Beijing Microelectronics)
Ver 1.2 Radiation-Hardened SRAM Datasheet Part Number:B8R512K8RH Version No. 1.0 1.1 1.2 Page of Revise Control Publish Time 11.25.2012 07.22.2015 .

B80-C1000 - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
B40-B380/C1000 PRV : 100 - 900 Volts Io : 1.0 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliabil.

B80-C1500R - SILICON BRIDGE RECTIFIERS (EIC discrete Semiconductors)
.eicsemi. TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 B40 - B380/C1500R SILICON BRIDGE RECTIFIERS PRV : 100 - 900 Volts Io : 1.5 Ampere.

B800 - 2SB800 (Renesas)
.

B804 - 2SB804 (Renesas)
.

B805 - 2SB805 (Renesas)
.

TAGS

B8R512K39RH Radiation-Hardened SRAM Beijing Microelectronics

Image Gallery

B8R512K39RH Datasheet Preview Page 2 B8R512K39RH Datasheet Preview Page 3

B8R512K39RH Distributor