BMT1417B26 Datasheet - Bipolarics

SILICON MICROWAVE POWER TRANSISTOR

* Common Base, Class C Package Configuration

* High Output Power 26 W @ 1.4 to 1.7 GHz

* High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t

* High Gain GPE = 7.0 dB to 8.2 dB

* High Reliability Gold Metallization Nitride Passivation

* Diffused B

BMT1417B26

Bipolarics

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Silicon microwave power transistor.

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BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR Bipolarics

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