BSD5
Boshida
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Single / dual output.
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📁 Related Datasheet
BSD214SN - Small-Signal-Transistor
(Infineon)
OptiMOS™2 Small-Signal-Transistor
Features • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to .
BSD22 - MOSFET N-channel depletion switching transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
BSD22 MOSFET N-channel depletion switching transistor
Product specification File under Discrete Semiconductors, SC.
BSD223P - OptiMOS -P Small-Signal-Transistor
(Infineon Technologies AG)
BSD 223P
OptiMOS-P Small-Signal-Transistor
Feature • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperatu.
BSD235C - Small-Signal-Transistor
(Infineon Technologies)
BSD235C
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor
Features · Complementary P + N channel · Enhancement mode · Super Logic level (2.5V rated).
BSD235N - Small-Signal-Transistor
(Infineon Technologies)
OptiMOS™2 Small-Signal-Transistor
Features • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified accordin.
BSD314SPE - 3 Small-Signal-Transistor
(Infineon Technologies AG)
BSD314SPE
OptiMOS™-P 3 Small-Signal-Transistor
Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified accordi.
BSD316SN - 2 Small-Signal-Transistor
(Infineon Technologies AG)
BSD316SN
OptiMOS™2 Small-Signal-Transistor
Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according.
BSD340N - MOSFET
(Infineon)
BSD340N
MOSFET
OptiMOSª2 Small-Signal-Transistor, 30 V
Features
• Dual N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qu.
BSD3A031LV45 - ESD Protection Diode
(BORN)
»Features
■ 800Watts peak pulse power (tp = 8/20μs) ■ Unidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage .
BSD5-W - Single / Dual Output
(Boshida)
BSD5-W 、
5W 、 4:1
BSD5-W
: 24Vdc:9.5~36Vdc
48Vdc:18~72Vdc
:Vo1 ±1%, Vo2 ±3% :<0.2%
,:Vo≤5V Vp-p≤80mV, Vo>5V Vp-p≤1%Vo, :<0.5%
:0.02%/°C :80%().