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National Semiconductor
National Semiconductor

CD4011BC Datasheet

Quad 2-Input NOR/NAND Buffered B Series Gate


CD4011BC Datasheet Preview


March 1988
CD4001BM CD4001BC Quad 2-Input
NOR Buffered B Series Gate
CD4011BM CD4011BC Quad 2-Input
NAND Buffered B Series Gate
General Description
These quad gates are monolithic complementary MOS
(CMOS) integrated circuits constructed with N- and P-chan-
nel enhancement mode transistors They have equal source
and sink current capabilities and conform to standard B se-
ries output drive The devices also have buffered outputs
which improve transfer characteristics by providing very
high gain
All inputs are protected against static discharge with diodes
to VDD and VSS
Features
Y Low power TTL
Fan out of 2 driving 74L
compatibility
or 1 driving 74LS
Y 5V – 10V – 15V parametric ratings
Y Symmetrical output characteristics
Y Maximum input leakage 1 mA at 15V over full tempera-
ture range
Schematic Diagrams
CD4001BC BM
of device shown
JeAaB
Logical ‘‘1’’ e High
Logical ‘‘0’’ e Low
TL F 5939 – 1
C1995 National Semiconductor Corporation TL F 5939
TL F 5939 – 5
TL F 5939 – 2
All inputs protected by standard
CMOS protection circuit
CD4011BC BM
of device shown
JeAB
Logical ‘‘1’’ e High
Logical ‘‘0’’ e Low
TL F 5939 – 6
All inputs protected by standard
CMOS protection circuit
RRD-B30M105 Printed in U S A
Page 1

Absolute Maximum Ratings (Notes 1 and 2)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Voltage at any Pin
Power Dissipation (PD)
Dual-In-Line
Small Outline
b0 5V to VDD a0 5V
700 mW
500 mW
VDD Range
Storage Temperature (TS)
Lead Temperature (TL)
(Soldering 10 seconds)
b0 5 VDC to a18 VDC
b65 C to a150 C
260 C
Operating Conditions
Operating Range (VDD)
Operating Temperature Range
CD4001BM CD4011BM
CD4001BC CD4011BC
3 VDC to 15 VDC
b55 C to a125 C
b40 C to a85 C
DC Electrical Characteristics CD4001BM CD4011BM (Note 2)
Symbol Parameter
Conditions
b55 C
Min Max
a25 C
Min Typ Max
a125 C
Units
Min Max
IDD Quiescent Device VDD e 5V VIN e VDD or VSS
Current
VDD e 10V VIN e VDD or VSS
VDD e 15V VIN e VDD or VSS
0 25
0 50
10
0 004
0 005
0 006
0 25
0 50
10
7 5 mA
15 mA
30 mA
( l lVOL Low Level
VDD e 5V
Output Voltage VDD e 10V IO k 1 mA
VDD e 15V
0 05
0 05
0 05
0 0 05
0 0 05
0 0 05
0 05 V
0 05 V
0 05 V
( l lVOH
High Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
IO k 1 mA
4 95
9 95
14 95
4 95
9 95
14 95
5
10
15
4 95
9 95
14 95
V
V
V
VIL Low Level
VDD e 5V VO e 4 5V
Input Voltage
VDD e 10V VO e 9 0V
VDD e 15V VO e 13 5V
15
2 15
15 V
30
4 30
30 V
40
6 40
40 V
VIH High Level
VDD e 5V VO e 0 5V
Input Voltage
VDD e 10V VO e 1 0V
VDD e 15V VO e 1 5V
35
70
11 0
35 3
70 6
11 0 9
35 V
70 V
11 0 V
IOL Low Level Output VDD e 5V VO e 0 4V
Current
VDD e 10V VO e 0 5V
(Note 3)
VDD e 15V VO e 1 5V
0 64
16
42
0 51 0 88
1 3 2 25
34 88
0 36 mA
0 9 mA
2 4 mA
IOH High Level Output VDD e 5V VO e 4 6V
Current
VDD e 10V VO e 9 5V
(Note 3)
VDD e 15V VO e 13 5V
b0 64
b1 6
b4 2
b0 51 b0 88
b1 3 b2 25
b3 4 b8 8
b0 36
b0 9
b2 4
mA
mA
mA
IIN
Input Current
VDD e 15V VIN e 0V
VDD e 15V VIN e 15V
b0 10
0 10
b10b5 b0 10
10b5 0 10
b1 0 mA
1 0 mA
Connection Diagrams
CD4001BC CD4001BM
Dual-In-Line Package
CD4011BC CD4011BM
Dual-In-Line Package
Top View
TL F 5939–3
2
Top View
TL F 5939 – 4
Order Number CD4001B or CD4011B
Page 2

DC Electrical Characteristics CD4001BC CD4011BC (Note 2)
Symbol Parameter
Conditions
b40 C
Min Max
a25 C
Min Typ Max
a85 C
Units
Min Max
IDD Quiescent Device VDD e 5V VIN e VDD or VSS
Current
VDD e 10V VIN e VDD or VSS
VDD e 15V VIN e VDD or VSS
1
2
4
0 004
0 005
0 006
1
2
4
7 5 mA
15 mA
30 mA
( l lVOL Low Level
VDD e 5V
Output Voltage VDD e 10V IO k 1 mA
VDD e 15V
0 05
0 05
0 05
0 0 05
0 0 05
0 0 05
0 05 V
0 05 V
0 05 V
( l lVOH
High Level
Output Voltage
VDD e 5V
VDD e 10V
VDD e 15V
IO k 1 mA
4 95
9 95
14 95
4 95
9 95
14 95
5
10
15
4 95
9 95
14 95
V
V
V
VIL Low Level
VDD e 5V VO e 4 5V
Input Voltage
VDD e 10V VO e 9 0V
VDD e 15V VO e 13 5V
15
2 15
15 V
30
4 30
30 V
40
6 40
40 V
VIH High Level
VDD e 5V VO e 0 5V
Input Voltage
VDD e 10V VO e 1 0V
VDD e 15V VO e 1 5V
35
70
11 0
35 3
70 6
11 0 9
35 V
70 V
11 0 V
IOL Low Level Output VDD e 5V VO e 0 4V
Current
VDD e 10V VO e 0 5V
(Note 3)
VDD e 15V VO e 1 5V
0 52
13
36
0 44 0 88
1 1 2 25
30 88
0 36 mA
0 9 mA
2 4 mA
IOH High Level Output VDD e 5V VO e 4 6V
Current
VDD e 10V VO e 9 5V
(Note 3)
VDD e 15V VO e 13 5V
b0 52
b1 3
b3 6
b0 44
b1 1
b3 0
b0 88
b2 25
b8 8
b0 36
b0 9
b2 4
mA
mA
mA
IIN
Input Current
VDD e 15V VIN e 0V
VDD e 15V VIN e 15V
b0 30
0 30
b10b5 b0 30
10b5 0 30
b1 0 mA
1 0 mA
AC Electrical Characteristics CD4001BC CD4001BM
TA e 25 C Input tr tf e 20 ns CL e 50 pF RL e 200k Typical temperature coefficient is 0 3% C
Symbol
Parameter
Conditions Typ Max Units
tPHL
Propagation Delay Time
High-to-Low Level
VDD e 5V
120 250
VDD e 10V 50 100
VDD e 15V
35
70
ns
ns
ns
tPLH
Propagation Delay Time
Low-to-High Level
VDD e 5V
110 250
VDD e 10V 50 100
VDD e 15V
35
70
ns
ns
ns
tTHL tTLH
Transition Time
VDD e 5V
90 200
VDD e 10V 50 100
VDD e 15V
40
80
ns
ns
ns
CIN
Average Input Capacitance
Any Input
5 7 5 pF
CPD
Power Dissipation Capacity
Any Gate
14
pF
AC Parameters are guaranteed by DC correlated testing
Note 1 ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation
Note 2 All voltages measured with respect to VSS unless otherwise specified
Note 3 IOL and IOH are tested one output at a time
3
Page 3
Part Number CD4011BC
Manufactur National Semiconductor
Description Quad 2-Input NOR/NAND Buffered B Series Gate
Total Page 6 Pages
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CD4011B , CD4011B , CD4011BC , CD4011BC , CD4011BC , CD4011BM , CD4011BMS , CD4011BT ,

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