NTR4501NT1G - N-Channel MOSFET

Datasheet Details

s.
VDS (V) = 20V.
ID = 3.2 A (VGS = 4.5V).
RDS(ON) ＜ 70mΩ (VGS = 4.5V).
RDS(ON) ＜ 85mΩ (VGS = 2.5V).
Leading Planar Technology for Low Gate Charge / Fast Switching.
2.5 V Rated for Low Voltage Gate Drive +0.12.4 -0.1 0-0.1 +0.10.38 -0.1.
Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note.1) TA=25℃ TA=85℃ Pulsed Drain Current @ tP=10us Power Dissipation (Note.1) Thermal Resistance. Junct.

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Published: Sep 7, 2018 |