CTZ12 - HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
SYMBOL VALUE Power Dissipation @TA=25ºC Surge Power Dissipation PTA PS 500 5 tp=8.3mS Junction Temperature Storage Temperature TJ Tstg 175 -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Thermal Resistance Junction Ambient Rth(j-a) UNIT mW
