CEB75N06 - N-Channel Enhancement Mode Field Effect Transistor
CEB75N06 Features
* 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP75N06/CEB75N06 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RA
