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CEB75N06 N-Channel Enhancement Mode Field Effect Transistor

CEB75N06 Description

N-Channel Enhancement Mode Field Effect Transistor .

CEB75N06 Features

* 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP75N06/CEB75N06 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RA

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Datasheet Details

Part number
CEB75N06
Manufacturer
CET
File Size
320.59 KB
Datasheet
CEB75N06-CET.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor CET
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