CED07N65A
CET
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N-channel mosfet.
📁 Related Datasheet
CED01N6 - N-Channel MOSFET
(CET)
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
CED01N65 - N-Channel MOSFET
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N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS.
CED01N65A - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O.
CED01N6G - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free .
CED01N7 - N-Channel MOSFET
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N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(.
CED02N6 - N-Channel MOSFET
(CET)
CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dens.
CED02N65A - N-Channel MOSFET
(CET)
CED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dens.
CED02N65D - N-Channel MOSFET
(CET)
CED02N65D/CEU02N65D
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dens.
CED02N65G - N-Channel MOSFET
(CET)
CED02N65G/CEU02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design f.
CED02N6A - N-Channel MOSFET
(CET)
CED02N6A/CEU02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for e.
