CED6186 Datasheet, mosfet equivalent, CET

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Part number: CED6186

Manufacturer: CET

File Size: 371.17KB

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Description: N-Channel MOSFET

CED6186 Features and benefits

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📁 Related Datasheet

CED61A2 - N-Channel MOSFET (CET)
CED61A2/CEU61A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super hi.

CED61A3 - N-Channel MOSFET (Chino-Excel Technology)
CED61A3/CEU61A3 Jan. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 30V , 40A , RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20m .

CED6030L - N-Channel MOSFET (CET)
CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super.

CED6031L - N-Channel MOSFET (CET)
CED6031L/CEU6031L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super h.

CED603AL - N-Channel MOSFET (Chino-Excel Technology)
CED603AL/CEU603AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super h.

CED6042 - N-Channel MOSFET (CET)
CED6042/CEU6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell .

CED6056 - N-Channel MOSFET (CET)
CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for e.

CED6056G - N-Channel MOSFET (CET)
CED6056G/CEU6056G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 80A , RDS(ON) = 5.4mΩ @VGS = 10V. Super high dense c.

CED6060N - N-Channel MOSFET (CET)
CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e.

CED6060R - N-Channel MOSFET (CET)
CED6060R/CEU6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for e.