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CED6601 P-Channel MOSFET

CED6601 Description

P-Channel Enhancement Mode Field Effect Transistor .

CED6601 Features

* -60V, -16A, RDS(ON) = 86mΩ RDS(ON) = 125mΩ @VGS = -10V. @VGS = -4.5V. CED6601/CEU6601 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-

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Datasheet Details

Part number
CED6601
Manufacturer
CET
File Size
357.38 KB
Datasheet
CED6601_CET.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET CET
CET CED6601-like datasheet