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CEF10N6S N-Channel MOSFET

CEF10N6S Description

CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

CEF10N6S Features

* Type CEF10N6S VDSS 600V RDS(ON) 0.75Ω ID 10A d @VGS 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter D

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Datasheet Details

Part number
CEF10N6S
Manufacturer
CET
File Size
581.97 KB
Datasheet
CEF10N6S-CET.pdf
Description
N-Channel MOSFET

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