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CEJ8218 Dual N-Channel Enhancement Mode Field Effect Transistor

CEJ8218 Description

www.DataSheet.co.kr Dual N-Channel Enhancement Mode Field Effect Transistor .

CEJ8218 Features

* 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. S1
* Typical value by design G1
* 1K D CEJ8218 D G2
* 1K S2 D 8 D 7 D 6 D 5 2928-8J

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Datasheet Details

Part number
CEJ8218
Manufacturer
CET
File Size
417.65 KB
Datasheet
CEJ8218_CET.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode Field Effect Transistor CET
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