CEM9407A - P-Channel MOSFET

CET

Datasheet Details

-60V, -3.7A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 165mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 5 SO-8 1 1 234 S SSG.

📁 CEM9407A Similar Datasheet

CEM9407 - P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
CEM9400 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9400A - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9410 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9410A - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9424 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9425 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM9426 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: Oct 1, 2015 |