CS18LV10245
CHIPLUS
375.99kb
High speed super low power sram. The CS18LV10245 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 131,072 words by
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📁 Related Datasheet
CS18LV02565 - HIGH SPEED SUPER LOW POWER SRAM
(ETC)
High Speed Super Low Power SRAM
32K-Word By 8 Bit
CS18LV02565
Revision History
Rev. No. 2.0
History Initial issue with new naming rule
Issue Date.
CS18LV40963 - High Speed Super Low Power SRAM
(CHIPLUS)
High Speed Super Low Power SRAM
512K Word By 8 Bit
CS18LV40963
Revision History
Rev. No. 2.0 2.1
History Initial issue with new naming rule Add a .
CS18-05N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-05N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-05P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-08N-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-08N-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-08P-1 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS18-08P-2 - PROXIMITY SWITCH
(HIGHLY)
PROXIMITY SWITCH
Description
The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m.
CS180N06A0 - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS180N06 A0
General Description:
CS180N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T.
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