B1MW-F Datasheet, Rectifier, CITC

B1MW-F Features

• Rectifier
• Low profile surface mounted application in order to optimize board space.
• High current capability, low forward voltage drop.
• High surge capability.

PDF File Details

Part number:

B1MW-F

Manufacturer:

CITC

File Size:

46.86kb

Download:

📄 Datasheet

Description:

Super fast rectifier.

TAGS

B1MW-F

CITC

📁 Related Datasheet

B10011S - CAN TRANSCEIVER (ATMEL Corporation)
Features • Capability of Single-wire Operation • Hardware Fault Recognition • Inputs with High Common-mode and Differential-mode Interference Rejectio.

B1007 - 2SB1007 (SavantIC)
SavantIC Semiconductor Silicon PNP Power Transistors .. DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown.

B1008 - Epitaxial Planar PNP Silicon Transistor (Rohm)
.

B100NF04L - STB100NF04L (STMicroelectronics)
.. N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.0042.

B100xxL - Led Display Master Green (ETC)
.

B1010 - PNP Silicon Transistor (Rohm)
.

B1011 - 2SB1011 (Panasonic Semiconductor)
Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features .

B1012 - 2SB1012 (Hitachi Semiconductor)
2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier plementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2..

B1015A - 2SB1015A (Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta.

B1016A - 2SB1016A (Toshiba)
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low .